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| MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM7785-8SL TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level HIGH POWER P1dB=39.5dBm at 7.7GHz to 8.5GHz HIGH GAIN G1dB=6.0dB at 7.7GHz to 8.5GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise SYMBOL P1dB G1dB IDS1 G ( Ta= 25C ) UNIT dBm dB A dB % dBc A C MIN. 38.5 5.0 -42 TYP. MAX. 39.5 6.0 2.2 30 -45 2.2 2.6 0.6 2.6 80 CONDITIONS VDS= 10V f= 7.7 to 8.5GHz add IM3 IDS2 Tch Two-Tone Test Po=28.5dBm (Single Carrier Level) (VDS X IDS + Pin - P1dB) X Rth(c-c) Recommended Gate Resistance(Rg): 150 (Max.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL ( Ta= 25C ) UNIT mS V A V C/W MIN. -1.0 -5 TYP. 1800 -2.5 5.2 2.5 MAX. -4.0 3.8 gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 3.0A VDS= 3V IDS= 30mA VDS= 3V VGS= 0V IGS= -100A Channel to Case The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jul. 2006 TIM7785-8SL ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 C) Channel Temperature Storage Temperature ( Ta= 25C ) SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W C C RATING 15 -5 7.0 39.5 175 -65 to +175 PACKAGE OUTLINE (2-11D1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 TIM7785-8SL RF PERFORMANCE Output Power (Pout) vs. Frequency VDS=10V IDS2.2A Pin=33.5dBm Pout(dBm) 40 39 38 37 7.7 7.9 8.1 8.3 8.5 Frequency (GHz) Output Power(Pout) vs. Input Power(Pin) 42 freq.=8.5GHz 41 40 39 VDS=10V IDS2.2A 80 Pout 70 60 50 40 30 20 10 27 29 31 33 35 37 Pout(dBm) 38 37 36 35 34 33 add Pin(dBm) 3 add(%) TIM7785-8SL Power Dissipation vs. Case Temperature 40 30 PT(W) 20 10 0 40 80 120 160 200 Tc (C) IM3 vs. Output Power Characteristics -10 VDS=10V IDS2.2A -20 freq.=8.5GHz f=5MHz -30 IM3 (dBc) -40 -50 -60 24 26 28 30 32 34 Pout (dBm) @Single carrier level 4 |
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